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 Ordering number : ENN8015
2SK3832
2SK3832
Features
* * * * *
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC Converter. Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 *1. VDD=20V, L=100H, IAV=30A *2. L100H, 1 Pulse Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings 100 20 30 120 2.5 65 150 --55 to +150 56 30 Unit V V A A W W C C mJ A
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=1mA, VGS=0 VDS=100V, VGS=0 VGS= 16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=15A ID=15A, VGS=10V ID=15A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz Ratings min 100 1 10 1.2 12.5 21 46 57 2150 160 110 60 80 2.6 typ max Unit V
A A
V S m m pF pF pF
Marking : K3832
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2404QA TS IM TB-00000312 No.8015-1/4
2SK3832
Continued from preceding page.
Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=50V, VGS=10V, ID=30A VDS=50V, VGS=10V, ID=30A VDS=50V, VGS=10V, ID=30A IS=30A, VGS=0 Ratings min typ 20 36 180 60 42 7.2 9.2 1.0 1.2 max Unit ns ns ns ns nC nC nC V
Package Dimensions unit : mm 2056A
15.6 14.0 3.2 4.8 2.0
Switching Time Test Circuit
VIN 10V 0V VIN
VDD=50V
ID=15A RL=3.3
2.6
3.5
D
1.2 15.0 20.0
PW=10s D.C.1%
VOUT
1.3
G
20.0
1.6
2.0 0.6
P.G 50 2SK3832
1.0 1 0.6 2 3
S
1.4
1 : Gate 2 : Drain 3 : Source SANYO : TO-3PB
5.45
5.45
Unclamped Inductive Circuit
50 RG L DUT
15V 0V
50
VDD
60
ID -- VDS
Tc=25C
60
ID -- VGS
5C Tc= -2
75 C
5.0
50
8.0
10 V
V
50
VDS=10V
Drain Current, ID -- A
40
6.0
Drain Current, ID -- A
V
4.0V
40
30
30
20
20
10
0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IT07709
0 0 1.0 2.0 3.0 4.0 6.0 IT07710
Drain-to-Source Voltage, VDS -- V
Gate-to-Source Voltage, VGS -- V
Tc=
VGS=3.0V
10
25 C
75 C --25 C
25
No.8015-2/4
C
2SK3832
120
RDS(on) -- VGS
ID=15A
130 120
RDS(on) -- Tc
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Static Drain-to-Source On-State Resistance, RDS(on) -- m
110 100 90 80 70 60 50 40 30 20 10 0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
110 100 90 80 70 60 50 40 30 20 10
Tc=75C
25C --25C
=1 ID
5
VG A,
A
4 S=
V
V
15 I D=
10 S= , VG
9.0
10
0 --50
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS -- V
100
yfs -- ID
IT07711 100 7 5 3 2
Case Temperature, Tc -- C
IT07712
IF -- VSD
VGS=0V
Forward Transfer Admittance, yfs -- S
7 5
VDS=10V
Forward Current, IF -- A
3 2
25
C
10 7 5 3 2
0.1 7 5 3 2 0.01 0 0.3 0.6 0.9 1.2 1.5 IT07714
0 0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
7 5 3
Ciss, Coss, Crss -- VDS
f=1MHz Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
5 7 100 IT07713 10 9.0
Diode Forward Voltage, VSD -- V
VDS=50V ID=30A
Ciss
Ciss, Coss, Crss -- pF
2 1000 7 5 3 2 100 7 5 0 5 10 15 20 25 30 IT07715
8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 5 10 15 20 25 30 35 40 45
Coss
Crss
Drain-to-Source Voltage, VDS -- V
1000 7
Total Gate Charge, Qg -- nC
3 2 100 7 5
Tc=7 5C 25C --25 C
C 5 -2 =Tc C 75
10 7 5 3 2 1.0 7 5 3 2
VGS -- Qg
IT07716
SW Time -- ID
VDD=50V VGS=10V
td(off)
ASO
IDP=120A ID=30A
10 10 ms 0m DC s op era tio n
<10s
Switching Time, SW Time -- ns
5 3 2
10
10 s
Drain Current, ID -- A
3 2 10 7 5 3 2 1.0 7 5 3 2
1m
0 s
s
100 7 5 3 2
tf
tr
Operation in this area is limited by RDS(on). Tc=25C Single pulse
2 3 5 7 1.0 2 3
td(on)
10 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT07717
0.1 0.1
5 7 10
2
3
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
5 7 100 2 IT07718
No.8015-3/4
2SK3832
3.0
PD -- Ta
Allowable Power Dissipation, PD -- W
80 70 65 60 50 40 30 20 10 0
PD -- Tc
Allowable Power Dissipation, PD -- W
2.5
2.0
1.5
1.0
0.5
0 0 20 40 60 80 100 120 140 160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- C
IT07720
Case Temperature, Tc -- C
IT07719
Note on usage : Since the 2SK3832 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2004. Specifications and information herein are subject to change without notice.
PS No.8015-4/4
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